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IRFB18N50KPBF 02/03/06 smps mosfet hexfet power mosfet v dss r ds(on) typ. i d 500v 0.26 ? 17a parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 17 i d @ t c = 100c continuous drain current, v gs @ 10v 11 a i dm pulsed drain current 68 p d @t c = 25c power dissipation 220 w linear derating factor 1.8 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 7.8 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 screw 10 n absolute maximum ratings to - 220ab switch mode power supply (smps) uninterruptible power supply high speed power switching hard switched and high frequency circuits lead-free benefits applications low gate charge qg results in simple drive requirement improved gate, avalanche and dynamic dv/dt ruggedness fully characterized capacitance and avalanche voltage and current low r ds(on) symbol parameter typ. max. units e as single pulse avalanche energy ??? 370 mj i ar avalanche current ??? 17 a e ar repetitive avalanche energy ??? 22 mj avalanche characteristics symbol parameter typ. max. units r jc junction-to-case ??? 0.56 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 58 thermal resistance pd - 95472a www.vishay.com 1 document number: 91100

dynamic @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 500 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.59 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 0.26 0.29 ? v gs = 10v, i d = 10a v gs(th) gate threshold voltage 3.0 ??? 5.0 v v ds = v gs , i d = 250a ??? ??? 50 a v ds = 500v, v gs = 0v ??? ??? 250 a v ds = 400v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current repetitive rating; pulse width limited by max. junction temperature. i sd 17a, di/dt 376a/s, v dd v (br)dss , t j 150c starting t j = 25c, l = 2.5mh, r g = 25 ? , i as = 17a, symbol parameter min. typ. max. units conditions g fs forward transconductance 6.4 ??? ??? s v ds = 50v, i d = 10a q g total gate charge ??? ??? 120 i d = 17a q gs gate-to-source charge ??? ??? 34 nc v ds = 400v q gd gate-to-drain ("miller") charge ??? ??? 54 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 22 ??? v dd = 250v t r rise time ??? 60 ??? i d = 17a t d(off) turn-off delay time ??? 45 ??? r g = 7.5 ? t f fall time ??? 30 ??? v gs = 10v,see fig. 10 c iss input capacitance ??? 2830 ??? v gs = 0v c oss output capacitance ??? 330 ??? v ds = 25v c rss reverse transfer capacitance ??? 38 ??? pf ? = 1.0mhz, see fig. 5 c oss output capacitance ??? 3310 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 93 ??? v gs = 0v, v ds = 400v, ? = 1.0mhz c oss eff. effective output capacitance ??? 155 ??? v gs = 0v, v ds = 0v to 400v ns symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.5 v t j = 25c, i s = 17a, v gs = 0v t rr reverse recovery time ??? 520 780 ns t j = 25c, i f = 17a q rr reverse recoverycharge ??? 5.3 8.0 c di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) s d g diode characteristics 17 68 pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .

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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 20s pulse width tj = 150c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 5.0 6.0 7.0 8.0 9.0 10.0 v gs , gate-to-source voltage (v) 0.01 0.10 1.00 10.00 100.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 100v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 17a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 20s pulse width tj = 25c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v www.vishay.com 3 document number: 91100

fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 30 60 90 120 150 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 17a v = 100v ds v = 250v ds v = 400v ds 0.1 1 10 100 0.2 0.5 0.8 1.1 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 1000 10 100 1000 1000 0 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms www.vishay.com 4 document number: 91100

fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 5 10 15 20 t , case temperature ( c) i , drain current (a) c d 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) www.vishay.com 5 document number: 91100

q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13a. gate charge test circuit fig 13b. basic gate charge waveform fig 12a. maximum avalanche energy vs. drain current fig 12d. unclamped inductive waveforms fig 12c. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 150 300 450 600 750 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 7.6a 11a 17a www.vishay.com 6 document number: 91100

p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets
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data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 02/06 to-220ab packages are not recommended for surface mount application.

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legal disclaimer notice vishay document number: 99901 www.vishay.com revision: 12-mar-07 1 notice the products described herein were acquired by vishay intertechnology, inc., as part of its acquisition of international rectifier?s power control systems (pcs) business, which closed in april 2007. specifications of the products displayed herein are pending review by vishay and are subject to the terms and conditions shown below. specifications of the products displayed herein are subject to change without notice. vishay intertechnology, inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale. international rectifier ? , ir ? , the ir logo, hexfet ? , hexsense ? , hexdip ? , dol ? , intero ? , and powirtrain ? are registered trademarks of international rectifier corporation in the u.s. and other countries. all other product names noted herein may be trademarks of their respective owners.

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